Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT
Update: 2010-08-05
Description
This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.Learning Objectives:Quantum Transport Simulator Full-Band and Atomistic III-V HEMTs Performance Analysis Good Agreement with Experiment Some Open Issues Outlook Improve Models (Contact) Investigate Scaling of Gate Length Scattering?
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