Lecture 3A: The Ballistic MOSFET

Update: 2008-09-10

Description

The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed intuitively in Lecture 2.

Comments

In Channel

Lecture 7: Connection to the Bottom Up Approach

2008-09-23--:--

Lecture 6: Quantum Transport in Nanoscale FETs

2008-09-12--:--

Lecture 3B: The Ballistic MOSFET

2008-09-10--:--

Lecture 3A: The Ballistic MOSFET

2008-09-10--:--

Lecture 5: Application to State-of-the-Art FETs

2008-09-08--:--

Lecture 4: Scattering in Nanoscale MOSFETs

2008-09-08--:--

Lecture 2: Elementary Theory of the Nanoscale MOSFET

2008-09-08--:--

Introduction: Physics of Nanoscale MOSFETs

2008-08-26--:--

Lecture 1: Review of MOSFET Fundamentals

2008-08-26--:--

00:00

Lecture 3A: The Ballistic MOSFET

#box-pro-ellipsis-176092958340913{-webkit-line-clamp:2;}Lecture 3A: The Ballistic MOSFET

Lecture 3A: The Ballistic MOSFET

Mark Lundstrom

Lecture 3A: The Ballistic MOSFET