Lecture 3B: The Ballistic MOSFET

Update: 2008-09-10

Description

This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

Comments

In Channel

Lecture 7: Connection to the Bottom Up Approach

2008-09-23--:--

Lecture 6: Quantum Transport in Nanoscale FETs

2008-09-12--:--

Lecture 3B: The Ballistic MOSFET

2008-09-10--:--

Lecture 3A: The Ballistic MOSFET

2008-09-10--:--

Lecture 5: Application to State-of-the-Art FETs

2008-09-08--:--

Lecture 4: Scattering in Nanoscale MOSFETs

2008-09-08--:--

Lecture 2: Elementary Theory of the Nanoscale MOSFET

2008-09-08--:--

Introduction: Physics of Nanoscale MOSFETs

2008-08-26--:--

Lecture 1: Review of MOSFET Fundamentals

2008-08-26--:--

00:00

Lecture 3B: The Ballistic MOSFET

#box-pro-ellipsis-176086797207825{-webkit-line-clamp:2;}Lecture 3B: The Ballistic MOSFET

Lecture 3B: The Ballistic MOSFET

Mark Lundstrom

Lecture 3B: The Ballistic MOSFET