Lecture 5: Application to State-of-the-Art FETs

Update: 2008-09-08

Description

The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.

Comments

In Channel

Lecture 7: Connection to the Bottom Up Approach

2008-09-23--:--

Lecture 6: Quantum Transport in Nanoscale FETs

2008-09-12--:--

Lecture 3B: The Ballistic MOSFET

2008-09-10--:--

Lecture 3A: The Ballistic MOSFET

2008-09-10--:--

Lecture 5: Application to State-of-the-Art FETs

2008-09-08--:--

Lecture 4: Scattering in Nanoscale MOSFETs

2008-09-08--:--

Lecture 2: Elementary Theory of the Nanoscale MOSFET

2008-09-08--:--

Introduction: Physics of Nanoscale MOSFETs

2008-08-26--:--

Lecture 1: Review of MOSFET Fundamentals

2008-08-26--:--

00:00

Lecture 5: Application to State-of-the-Art FETs

#box-pro-ellipsis-176087588452198{-webkit-line-clamp:2;}Lecture 5: Application to State-of-the-Art FETs

Lecture 5: Application to State-of-the-Art FETs

Mark Lundstrom

Lecture 5: Application to State-of-the-Art FETs